schottky barrier diode rb161l-40 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)small power mold type. pmds 2)low v f 3)high reliability ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj ?c tstg ?c ? electrical characteristic (ta=25c) symbol min. typ. max. unit forward voltage v f - - 0.40 v i f =1.0a reverse current i r --1ma v r =20v conditions storage temperature ? 40 to ? 125 (*1)mounted on epoxy board. 180half sine wave parameter forward current surge peak (60hz ? 1cyc) 70 junction temperature 125 reverse voltage (dc) 20 average rectified forward current 1 parameter limits reverse voltage (repetitive) 40 pmds 2.0 4.2 2.0 manufacture date 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max rohm : pmds jedec : sod-106 3 3 0.10.02 0.1 2.60.2 2.00.2 5.00.3 1.20.3 4.50.2 1.50.2 manufacture date 1/3 2011.04 - rev.h data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb161l-40 0 5 10 15 20 ave:9.3ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm dispersion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) 0.001 0.01 0.1 1 0 200 400 600 ta=-25 ta=125 ta=75 ta=25 ta=150 1 10 100 1000 10000 100000 1000000 5 1015202530 ta=125 ta=75 ta=25 ta=-25 ta=150 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz 320 330 340 350 360 370 ave:347.7mv ta=25 if=1a n=30pcs 0 50 100 150 200 250 300 350 400 450 500 ta=25 vr=20v n=30pcs ave:110.3ua 200 210 220 230 240 250 260 270 280 290 300 ave:251.8pf ta=25 f=1mhz vr=0v n=10pcs 0 50 100 150 ave:127.0a 8.3ms ifsm 1cyc 0 50 100 150 200 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 50 100 150 200 110100 t ifsm 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=100ma if=0.5a 300us time mounted on epoxy board 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 00.511.52 dc d=1/2 sin(?180) 2/3 2011.04 - rev.h www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb161l-40 reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:0t() derating curve?(io-tc) 0 10 20 30 40 50 0 10203040 sin(?180) dc d=1/2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 sin(?180) dc d=1/2 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 dc d=1/2 sin(?180) t tj=125 d=t/t t vr io vr=20v 0 a 0v 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave:12.3kv no break at 30kv electrostatic discharge test esd(kv) esd dispersion map t tj=125 d=t/t t vr io vr=20v 0 a 0v 3/3 2011.04 - rev.h www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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